t4 -lds-xxxx, rev x ( 10 - 02 - 14 ) ?2013 microsemi corporation page 1 of 6 1n8 14 9us C 1n8182 us available voidless-hermetically-sealed unidirectional 150 w low-capacitance transient voltage suppressors description this series of voidless-hermetically-sealed unidirectiona l low -capacitance transient voltage suppressor (tvs) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. they include a unique rectifier dio de in series and opposite direction from the tvs to achieve a very low capacitance of 4 pf. th is product series provides a working peak s tandoff voltage selection from 6.8 to 170 volts with 150 watt ratings. they a re very robust in hard- glass construction and also use an internal metallurgical b ond identified as category 1 for high reliability applications. these devices are also available in axial le aded packages for thru-hole mounting. a sq -melf package also available in: a package (axial-leaded) 1n 8 14 9 C 1n8 182 important : for the latest information, visit our website http://www.microsemi.com . features ? high surge current and peak pulse power unidirectional protection f or sensitive circuits. ? very low capacitance for high frequency or high baud rate applicati ons. ? bidirectional capability with two devices in anti-parallel (see figure 5). ? triple-layer passivation. ? internal category 1 metallurgical bonds. ? voidless hermetically sealed glass package. ? rohs compliant versions are available. applications / benefits ? high reliability transient protection. ? extremely robust construction. ? working p eak s tandoff voltage (v wm ) from 6.8 to 170 volts. ? available as 150 w peak pulse power (p pp ) at 10/1000 s. ? lowest available capacitance for 150 w rated tvs. ? esd and eft protection per iec61000-4-2 and iec61000-4-4 respectively. ? secondary lightning protection per select levels in iec61000-4-5 . ? square-end-cap terminals for easy placement. ? nonsensitive to esd per mil-std- 750 method 1020. ? inherently radiation hard as described in microsemi micronote 050 . maximum ratings msc C lawrence 6 lake street, lawrence, ma 018 41 1- 800 -446-1158 (978) 620-2600 fax: (978) 689- 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -55 to +175 o c capacitance at zero volts c 4 pf thermal resistance junction to ambient r ja 150 o c/w peak pulse power at 25 o c (10s/1000s) p pp 150 w impulse repetition rate (duty factor) d.f 0.01 % steady state (average) power @ t a = 25 o c p m(av) 1 .0 w solder temperature (10 s maximum) 260 o c note: steady-state power ratings with reference to ambient are for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where t j(max) is not exceeded. downloaded from: http:///
t4 -lds-xxxx, rev x ( 10 - 02 - 14 ) ?2013 microsemi corporation page 2 of 6 1n8 14 9us C 1n8182 us mechanical and packaging ? case: hermetically sealed voidless hard glass with tungsten slug s. ? terminals: end caps feature tin/lead or rohs compliant matte/tin platin g over copper. ? marking: none ? polarity: cathode band ? mounting: any position ? tape & reel option: standard per eia- 481 -b. consult factory for quantities. ? weight: approximately 539 milligrams. ? see package dimensions on last page. part nomenclature mq 1n8149 us (e3) reliability level mq (reference jan) mx (reference jantx) mv (reference jantxv) ms (reference jans) blank = commercial type number (see electrical characteristics table) rohs compliance e3 = rohs compliant blank = non-rohs compliant melf surface mount symbols & definitions symbol definition ? v(br) temperature coefficient of breakdown voltage: the change in breakd own voltage divided by the change in temperature that caused it expressed in %/c or mv/c. v (br) breakdown voltage: the voltage across the device at a specified c urrent i (br) in the breakdown region. v wm working standoff voltage: the maximum-rated value of dc or repetiti ve peak positive cathode- to -anode voltage that may be continuously applied over the standard operating tempera ture. i d st andby current: the current through the device at rated stand-off voltag e. i (br) breakdown current: the current used for measuring breakdown voltage v (br) i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. a random recurring or nonr epetitive transient current is usually due to an external cause, and it is assumed that its effect will have compl etely disappeared before the next transient arrives. v c cl amping voltage: the voltage across the device in a region of low d ifferential resistance during the application of an impulse current (i pp ) for a specified waveform. p pp peak pulse power. the rated random recurring peak impulse power or rated no nrepetitive peak impulse power. the impulse power is the maximum-rated value of the product of i pp and v c . c t total capacitance: the total small signal capacitance between t he diode terminals of a complete device. v wib inverse blocking voltage: the maximum- ra ted value of dc or peak blocking voltage in the inverse direction. i ib blocking leakage current: the current through the device at the rated inverse blocking voltage (v wib ). downloaded from: http:///
t4 -lds-xxxx, rev x ( 10 - 02 - 14 ) ?2013 microsemi corporation page 3 of 6 1n8 14 9us C 1n8182 us electrical characteristics @ t a = 25 o c unless otherwise noted . type number minimum breakdown voltage (v (br) ) breakdown current (i (br) ) working standoff voltage (v wm ) maximum standby current (i d ) maximum peak clamping voltage (v c ) maximum surge current (i pp ) maximum v (br) temperature coefficient ( v(br) ) capacitance (c t ) inverse blocking voltage (v wib ) blocking leakage current (i ib ) v ma v ? a v a %/oc pf v ? a 1n8149 1n8150 1n8151 1n8152 1n8153 1n8154 1n8155 1n8156 1n8157 1n8158 1n8159 1n8160 1n8161 1n8162 1n8163 1n8164 1n8165 1n8166 1n8167 1n8168 1n8169 1n8170 1n8171 1n8172 1n8173 1n8174 1n8175 1n8176 1n8177 1n8178 1n8179 1n8180 1n8181 1n8182 7.79 8.65 9.50 10.4 11.4 12.4 13.8 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 104.0 114.0 124.0 138.0 152.0 171.0 190.0 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 6.8 7.5 8.5 9.0 10.0 11.0 12.0 13.0 15.0 17.0 18.0 20.0 22.0 25.0 28.0 30.0 33.0 36.0 40.0 43.0 47.0 53.0 58.0 64.0 70.0 75.0 82.0 94.0 100.0 110.0 120.0 130.0 150.0 170.0 20 10 10 5 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 12.8 13.5 14.5 15.6 16.9 18.2 20.2 22.3 25.1 27.7 30.5 33.3 37.4 41.6 45.7 49.9 53.6 59.1 64.6 70.1 77.0 85.3 93.7 103.0 113.0 125.0 137.0 152.0 168.0 183.0 208.0 225.0 261.0 294.0 11.7 11.1 10.3 9.62 8.88 8.24 7.42 6.73 5.98 5.42 4.92 4.50 4.01 3.60 3.28 3.01 2.80 2.54 2.32 2.14 1.95 1.76 1.60 1.45 1.32 1.20 1.09 0.98 0.89 0.82 0.72 0.67 0.57 0.51 .065 .068 .073 .075 .078 .081 .084 .086 .088 .090 .092 .094 .096 .097 .098 .099 .100 .101 .101 .102 .103 .104 .104 .105 .105 .105 .106 .107 .107 .107 .108 .108 .108 .108 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 300 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 downloaded from: http:///
t4 -lds-xxxx, rev x ( 10 - 02 - 14 ) ?2013 microsemi corporation page 4 of 6 1n8 14 9us C 1n8182 us graphs pulse time (tp) ms to 50% decay point in figure 2 figure 1 peak pulse power vs. pulse time t C time C ms figure 2 10/1000 ? s current impulse waveform i pp C peak pulse current - % i pp peak pulse power ( p pp ) kw downloaded from: http:///
t4 -lds-xxxx, rev x ( 10 - 02 - 14 ) ?2013 microsemi corporation page 5 of 6 1n8 14 9us C 1n8182 us graphs t a ambient temperature o c figure 3 derating curve schematic applications the tvs low capacitance device configuration described in this d ata sheet is shown in figure 4 involving a tvs and a unique diode in series and opposite direction. for bidirectional low c apacitance tvs applications, use two (2) low capacitance tvs devices as described in this data sheet in anti-parallel as sh own in figure 5. this will result in twice the capacitance of fig ure 4 specified in this data sheet. figure 4 figure 5 low capacitance tvs bidirectional configuration (2 low capacitance tvs devices in anti-parallel) pulse conditions defined in figures 1 & 2 peak pulse power (p pp ) or current i pp (surge) in percent of 25 o c rating cathode > > downloaded from: http:///
t4 -lds-xxxx, rev x ( 10 - 02 - 14 ) ?2013 microsemi corporation page 6 of 6 1n8 14 9us C 1n8182 us package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. minimum clearance of glass body to mounting surface on all orientations. 4. in accordance with asme y14.5m, diameters are equivalent to ? x symbology. dimensions ltr inches millimeters min max min max bd 0.091 0.103 2.31 2.62 bl 0.168 0 .2 15 4.28 5.47 ect 0.019 0.028 0.48 0.71 s 0.003 0.08 pad layout note: if mounting requires adhesive separate from the solder, an additio nal 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. dim inch millimeters a 0.288 7.32 b 0.070 1.78 c 0.155 3.94 downloaded from: http:///
|
